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 ZXMP6A18K 60V P-channel enhancement mode MOSFET
Summary
V(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A
Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
D
G S
Features
* * * * * Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package
Applications
* * Motor drive Disconnect switches
Ordering information
Device ZXMP6A18KTC Reel size (inches) 13 Tape width 16mm Quantity per reel
Pinout - Top view
2500 units
Device marking
ZXMP 6A18
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ZXMP6A18K
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Continuous drain current @VGS=10V; TA=25C (b) @VGS=10V; TA=70C (b) @VGS=10V; TA=25C (a) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at TA =25C (a) Linear derating factor Power dissipation at TA =25C (b) Linear derating factor Power dissipation at TA =25C (d) Linear derating factor Operating and storage temperature range IDM IS ISM PD ID -10.4 -8.3 -6.8 -37.5 -11.5 -37.5 4.3 34.4 10.1 80.8 2.15 17.2 -55 to +150 A A A A A A W mW/C W mW/C W mW/C C Symbol VDSS VGS Limit -60 20 Unit V V
PD
PD
Tj:Tstg
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (d) Symbol R JA R JA R JA Value 29 12.3 58 Unit C/W C/W C/W
NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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ZXMP6A18K
Characteristics
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ZXMP6A18K
Electrical characteristics (at TA = 25C unless otherwise stated)
Parameter Static Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (*) Forward transconductance (*)() Dynamic () Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on delay time Rise time Turn-off delay time Fall time Gate charge Total gate charge Gate-source charge Gate-drain charge Source-drain diode Diode forward voltage (*) Reverse recovery time () Reverse recovery charge
()
Symbol
Min.
Typ.
Max.
Unit
Conditions
-60 -1.0 100 -1.0 0.055 0.080 8.7
V A nA V
IDSS IGSS VGS(th) RDS(on) gfs
ID=-250 A, VGS=0V VDS=-60V, VGS=0V VGS =20V, VDS=0V ID=-250 A, VDS=VGS VGS=-10V, ID=-3.5A VGS=-4.5V, ID=-2.9A
S
VDS=-15V,ID=-3.5A
Ciss Coss Crss td(on) tr td(off) tf Qg Qg Qgs Qgd
1580 160 140
pF pF pF VDS=-30 V, VGS=0V, f=1MHz
4.6 5.8 55 23 23 44 3.9 9.8
ns ns ns ns nC nC nC nC VDS=-30V,VGS=-10V, ID=-3.5A VDS=-30V,VGS=-5V, ID=-3.5A VDD =-30V, ID=-1A RG=6.0W,VGS=-10V
VSD trr
Qrr
-0.85 37 56
-0.95
V ns nC
TJ=25C, IS=-4.2A, VGS=0V TJ=25C, IF=-2.1A, di/dt= 100A/s
NOTES: 300s. Duty cycle 2%. (*) Measured under pulsed conditions. Width () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing.
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ZXMP6A18K
Typical characteristics
Issue 1 - March 2006
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ZXMP6A18K
Typical Characteristics
Current regulator
QG
12V 0.2 F 50k Same as D.U.T
VG
QGS
QGD
VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90%
VGS RG RD VDS VCC
10% VGS tr t(on) td(off) tr t(on) td(on)
Pulse width 1 S Duty factor 0.1%
Switching time waveforms
Switching time test circuit
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ZXMP6A18K
Intentionally left blank
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ZXMP6A18K
Package outline - DPAK
DIM A A1 b b2 b3 c c2 D D1 E E1
Inches Min Max 0.086 0.094 0.005 0.020 0.035 0.030 0.045 0.205 0.215 0.018 0.024 0.018 0.023 0.213 0.245 0.205 0.250 0.265 0.170 -
Millimeters Min Max 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 -
DIM e H L L1 L2 L3 L4 L5 1 -
Inches Min Max 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.060 0 10 0 15 -
Millimeters Min Max 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.508 BSC 0.89 1.65 0.635 1.016 1.14 1.52 0 10 0 15 -
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
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